| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 봄 (04/09 ~ 04/10, 대전컨벤션센터) |
| 권호 |
34권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Study the influence of argon flow rate, oxygen flow rate in RIE mode and bias voltage effect in PECVD mode on the barrier performances of SiOx on polymeric substrates. |
| 초록 |
The effects of Ar & O2 flow rate on SiOx coatings at a fixed RF power of 300W were studied on PET & PEN in RIE mode. The negative DC bias voltage effect on SiOx was only studied for PEN substrate in PECVD mode. The WVTR of untreated PET & PEN were 4.56 & 6.27g/m2/day, respectively. The minimum WVTR 0.47g/m2/day for PET 0.29g/m2/day for PEN were observed with the coating thickness of 415.44nm in RIE mode for 1.5g/h of HMDSO flow rate. The WVTR was found for 1.0g/h of HMDSO flow rate and that was 1.4g/m2/day at -150V of bias voltage with 228.46nm thickness. There was no significant change in WVTR was observed for the 1.0g/h of HMDSO flow rate in PECVD mode. The carbon content was increased with the increase of HMDSO flow rate, in PECVD mode due to the incomplete fragmentation and dissociation of monomer. Examination by AFM & SEM revealed a correlation between SiOx morphology and water vapor barrier performance. |
| 저자 |
김원호, Choudhury Moinul Haque, 김성룡
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| 소속 |
충주대 |
| 키워드 |
Hexamethyl disiloxane (HMDSO); SiOx; FTIR; WVTR; Bias voltage |
| E-Mail |
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