| 초록 |
To achieve a high energy storage density, the permittivity and dielectric breakdown voltage should be increased and hysteresis of ferroelectric material should be diminished to decrease the loss. This study attempts to reduce the hysteresis of PZT with high permittivity. The PZT based films mixed the three different compositions [PbZr0.52Ti0.48O3], [PbZr0.82Ti0.18O3], [PbZr0.18Ti0.82O3], were fabricated on a Si-Pt substrate using the AD method. AD method gives high dense thick films with nano-sized grains at room temperature. To control the degree of crystallinity and grain growth, AD films were heat treated. In addition, through heat-treatment, the chemical reaction at the interface between different PZT compositions was achieved. The films were annealed at 450, 550 and 650℃ for 2h. EDX, XRD, and energy storage density were measured. Dielectric permittivity verse Temperature behaviors were characterized to nano-size effect in grains. |
