| 학회 | 한국재료학회 |
| 학술대회 | 2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 | 13권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | A study on Optical/Electrical properties of Sb100-xSex Thin Films |
| 초록 | PRAM is one of the most promising candidates for new-generation nonvolatile memory devices. However, such applications still demand advanced materials to guarantee high speed, low power consumption and reliability of device, which could be realized by control of phase transition behaviors such as rapid crystallization, easy amorphization, and reinforced phase stability of phase change materials. In this study, the structural transformation, electrical/optical switching properties of Sb100-xSex thin films were studied to optimize phase change materials. Sb100-xSex thin films were deposited on Si(100) wafer and slide glass by RF magnetron co-sputtering system and phase change characteristics were analyzed by X-ray diffractometer, 4-point prove measurement and static tester. In optimum composition, the crystallization time was below 20ns by pulsed laser irradiation, and it was accelerated by re-crystallization process. The sheet resistance different was higher than 104 Ω/⌋ upon phase transition. The crystallization temperature and minimum time for crystallization of Sb100-xSex thin films were increased as the amount of Se increased, which correlated with activation energy for crystallization. |
| 저자 | 박성진, 김상균, 김인수, 최세영 |
| 소속 | 연세대 |
| 키워드 | phase change RAM; glass semiconductor |
