| 학회 |
한국재료학회 |
| 학술대회 |
2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 |
16권 2호 |
| 발표분야 |
F. Display and optic Materials and processing(디스플레이 및 광 재료) |
| 제목 |
Effect of Ni doping concentration on the properties of nickel doped indium zinc oxide thin films on flexible substrates prepared by combinatorial RF magnetron sputtering method |
| 초록 |
Nickel doped indium zinc oxide (NIZO) thin films were prepared by combinatorial magnetron sputtering method on Polyethersulfone substrates at room temperature. Effect of nickel doing concentrations on the structural, morphology, electrical, and optical properties of NIZO thin films were investigated using X-ray diffraction, field emission secondary electron microscopy, UV-Vis spectroscopy, and Hall measurement system, respectively. X-ray diffraction results showed that the NIZO thin films were grown as an amorphous phase over the entire set of nickel doping concentrations. The thickness of NIZO thin films varies in the range from 70 nm to 300 nm and morphology of films are a very smooth and dense without any voids. The NIZO thin films have a high transmittance about 90% in the visible region and absorption edge of films are about 380nm. The electrical properties of NIZO thin films decreased with increasing nickel doping concentrations. The lowest electrical resistivity of NIZO thin film is about 5.2x10-4 Ωcm. The role of Nickel doping in NIZO films could be discussed in relation to the electrical properties and amorphous structure. |
| 저자 |
Hyun Kee Lee1, Tae-Won Kim2, Jae-chul Park3, Young-Je Jo4, Jin Hyeok Kim5, Gi-Seok Heo6
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| 소속 |
1Photonic and Electronic Thin Films Laboratory, 2Department of Materials Science & Engineering, 3Chonnam National Univ., 4Gwangju 500-757, 5Korea, 6National Center for Nanoprocess and Equipments |
| 키워드 |
NIZO (nickel doped Indium zinc oxide); IZO; Ni; Combinatorial sputtering; nickel doping concentration
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| E-Mail |
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