| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
E. Structural Materials and Processing Technology(구조재료 및 공정기술) |
| 제목 |
Condition of optimum growth and electrical properties of ZnAl2Se4 Single Crystal Thin Film |
| 초록 |
To obtain the single crystal thin films, ZnAl2Se4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 630℃ and 400℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnAl2Se4 single crystal thin films measured from Hall effect by van der Pauw method are 9.41×1016 cm-3 and 292 cm2/v․s at 293K, respectively. |
| 저자 |
Kwangjoon Hong |
| 소속 |
Department of physics Chosun Univ. |
| 키워드 |
Condition of optimum growth; carrier density; mobility
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| E-Mail |
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