| 학회 |
한국재료학회 |
| 학술대회 |
2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 |
24권 2호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Characterization of Cu2SnS3(CTS) thin film solar cell prepared using sputtering method |
| 초록 |
Cu2SnS3(CTS) is one of the interesting absorber compound owing to the presence of earth-abundant and nontoxic elements. In the present work, Cu2SnS3(CTS) thin film solar cells have been fabricated using sputtered deposited Cu/Sn metallic precursors on Mo-coated soda lime glass(Mo-SLG) substrate. The metallic precursor thin films are sulfurized in a graphite box containing S powder using rapid thermal annealing (RTA) furnace. The influence of varied sulfurization parameter (pressure 300~500torr) on the CTS thin film properties and its solar cell performance are studied. The morphological, structural and electrical properties of the CTS absorber layer are studied using field-emission transmission electron microscopy (FE-TEM), Fluorescence Spectrometer (XRF), X-ray diffraction (XRD) and J-V. The best power conversion efficiency of 2.80 % with a short circuit current density of 28.1 mA/cm2, an open circuit voltage of 207.5mV, and fill factor of 48% is obtained. |
| 저자 |
In Jae Lee1, Jin Hyeok Kim2
|
| 소속 |
1Optoelectronic Convergence Research Center, 2Department of Materials Science and Engineering |
| 키워드 |
<P>TFSCs; Cu2SnS3(CTS); Sputtering</P>
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| E-Mail |
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