| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
37권 2호 |
| 발표분야 |
고분자가공/복합재료 |
| 제목 |
Influence of Cu crystalline orientation on the crystalline structure and electrical properties of CVD grown graphene |
| 초록 |
Graphene grown by chemical vapor deposition method using Cu foil has succeeded in preparation of large area graphene as well as monolayer dominant coverage. While reliable electrical properties are obtained from grown graphene, lower properties such as lower carrier motilities than those of exfoliated graphene from graphite suggest the problems to be improved for high quality graphene synthesis. Especially, the effects of Cu crystal orientation, consisting of lots of randomly oriented domains, on the kinetics of graphene growth and polycrystalline graphene formation are intuitively suspected. Here we report the influence of Cu domain orientation on the crystalline structure of graphene grown on the various Cu domains including Cu (111) and Cu (110). |
| 저자 |
김대우1, 이진섭1, 김윤호2, 김선준1, 정희태1
|
| 소속 |
1KAIST, 2한국화학(연) |
| 키워드 |
그래핀; 결정면; CVD
|
| E-Mail |
|
