| 초록 |
In this study, CZTSSe precursors were treated using rapid thermal processing (RTP). A low-temperature pre-annealing treatment (PAT) was applied to induce a pre-reaction between Se and Cu/SnS/ZnS. It was found that the PAT leads to the formation of CuSe and Cu2−xSe and enhances Se incorporation during RTP chalcogenization. SEM, XRD, Raman analysis, and STEM-EDS was applied to investigate the difference between absorbers with and without PAT. Compared to without PAT, better morphology was obtained in the surface and cross section for the CZTSSe absorber annealed with PAT. The cell with the PAT showed an efficiency of 6.77% with an open-circuit voltage (VOC), short-circuit current density (JSC) and fill factor (FF) of 376 mV, 31.39 mA/cm2 and 57%. |
