| 학회 | 한국공업화학회 |
| 학술대회 | 2017년 가을 (11/08 ~ 11/10, 부산 벡스코(BEXCO)) |
| 권호 | 21권 2호 |
| 발표분야 | 에너지저장변환_포스터 |
| 제목 | Control of sputtered Sb-Cu metal precursor films by pre-annealing treatment in the preparation of CuSbS2 thin films |
| 초록 | Copper antimony sulfide (CuSbS2) is one of the most interesting materials for an absorber layer as an alternative Cu(In,Ga)Se2 (CIGS) absorber because of its direct band gap energy of about ~1.6 eV and an optical absorption coefficient of around 104cm-1, which means the potential of CuSbS2 as photovoltaic applications. In this work, we have investigated the effect of pre-annealing treatment on the chemical and physical states of CuSbS2 precursor films. We firstly deposited Cu and Sb metal stack by sputtering process, followed by pre-annealing process with various temperature profiles. Detailed condition of pre-annealing process, such as pre-annealing temperature, pre-annealing time, and ramping rate, were closely related with the properties of CuSbS2 precursor films, which were also closely related with sulfurized CuSbS2 thin films. This work was supported by DGIST R&D Program of the Ministry of Science, ICT & Future Planning of Korea (17-BD-05). |
| 저자 | 박시내, 성시준, 양기정, 강진규, 김대환 |
| 소속 | 대구경북과학기술원 |
| 키워드 | CuSbS2; Sputter process |
