| 학회 |
한국재료학회 |
| 학술대회 |
2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 |
11권 2호 |
| 발표분야 |
전자재료 |
| 제목 |
사파이어 기판 위 MOCVD 성장된 GaN 이종에피층의 고온 성장온도에 따른 변형과 응력 |
| 초록 |
Stresses and strains in heterostructure have influence on semiconductor. We have investigated stresses and strains during metal organic chemical vapor-phase epitaxy of undoped GaN with various growth temperature. The samples were grown on sapphire (0001) substrate at low pressure of 300 torr via a typical two-step growth condition in horizontal MOCVD reactor for the final growth temperature range of 850℃ ~ 1050℃. Values of strain and stress determined by the double crystal x-ray diffraction rocking curves were used in the calculations. Biaxial stress ranges in the a-direction were -0.795 ~ 0.714 GPa. Biaxial stress are compared with room-temperature photoluminescence peaks shift. |
| 저자 |
장경화, 권명석, 조성일
|
| 소속 |
서울시립대 |
| 키워드 |
GaN; stress; strain; DCXRD
|
| E-Mail |
|
