| 초록 |
Various types of n-type buffer layers have been used in organic electronic devices. These buffer layers turned out to expedite carrier injection and reduce series resistance, leading to good performances. In the present work, we have fabricated organic photovoltaic (OPV) cells consisting of ITO/DMDCNQI/P3HT:PCBM/WOx/Ag. This inverted structure of OPV cells fabricated using DMDCNQI as an n-type buffer layer shows good performances leading to the increase of short-circuit current (Jsc) and to fill factor (FF) in comparison to P3HT:PCBM based conventional cells. In addition, the prepared cell using WOx, as an alternative to PEDOT:PSS, allows it to have particularly good stability. The results imply that the structure of inverted solar cells using WOx and DMDCNQI can provide an alternative approach to achieve high performance and air durability simultaneously. |
