| 학회 |
한국재료학회 |
| 학술대회 |
2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 |
14권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Low Temperature MBE Growth of Mg-doped AlxGa1-xAs Epitaxial Layers and Its properties |
| 초록 |
Mg doped AlxGa1-xAs epitaxial layers grown at low substrate temperature were studied. The Hall effect and photoluminescence (PL) have been carried out to investigate the electrical properties of the Mg doped AlxGa1-xAs samples. The carrier concentration by Hall measurement of the samples decreased from 1.86 × 1017 to 4.87 × 1014 cm-3 with increase in substrate temperature ranged from 530 to 630 ℃. This can be attributed to dramatically decrease in Mg incorporation on Ⅲ-Ⅴ epilayers with increase in substrate temperature. The PL spectra of the Mg doped Al0.13Ga0.87As samples with the substrate temperature range were redshifted ranging from 1.780 to 1.768 eV when p-type doping level increased. The full width half maximum (FWHM) varied from 9.378 to 11.200 meV as the spectra were redshifted. And also, the electrical and optical properties of the Mg doped AlxGa1-xAs samples are dependent on the Al mole fraction and As/Ga BEP ratio. The properties of the samples were compared with Mg doped GaAs and Be doped AlGaAs layers. Finally, we obtained high quality Mg doped AlxGa1-xAs epitaxial layers even at below 600 ℃ of substrate temperature. Therefore, the Mg as a p-type dopant can be effectively used for nanostructure semiconductors such as quantum dots with growth temperature below 500 ℃. |
| 저자 |
Min Su Kim1, Do Yeob Kim2, Ho Jin Park3, Goon Sik Kim4, Hyun Young Choi5, Hyuk hyun Ryu6, Minhyon Jeon1, Guan Sik Cho2, Jong Su Kim3, Jin Soo Kim4, Dong-Yul Lee5, Jeong-Sik Son6, Jae-Young Leem1
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| 소속 |
1School of Nano Engineering, 2Institute of Nano Manufacturing, 3Inje Univ., 4Obang-dong, 5Gimhae 621-749, 6Korea |
| 키워드 |
Magnesium; AlGaAs; Molecular beam epitaxy; Hall effect; Photoluminescence; Low temperature
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| E-Mail |
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