| 학회 |
한국화학공학회 |
| 학술대회 |
2016년 가을 (10/19 ~ 10/21, 대전컨벤션센터) |
| 권호 |
22권 2호, p.1429 |
| 발표분야 |
고분자 |
| 제목 |
Characteristics of Organic Memory Transistors with High-k Polymer Gate-Insulating Layers – Low Voltage and High Stability |
| 초록 |
Flexible electronics has recently attracted strong attention and is about to be implanted in mobile devices etc. Organic light-emitting devices are being manufactured on flexible plastic substrates for smart phones and ready for mass production tackling large-area high-definition televisions. In order to achieve the final goal of flexible electronics, all components in devices should be flexible. Unfortunately, conventional inorganic memory devices are insufficient because of their inherently rigid and limited flexibility. In this regard, organic memory devices are rising as a candidate for next generation memory platforms. Although various efforts have been attempted, both low-voltage and high stability have been not yet reported for organic memory devices. This presentation will introduce our approached for high stability organic memory transistors with high-k polymers and discuss the influence of polymer molecular weights. |
| 저자 |
서주역1, 남성호2, 정재훈1, 이철연1, 김화정1, Thomas D Anthopoulos3, Donal D. C Bradley2, 김영규1
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| 소속 |
1경북대, 2Oxford Univ., 3Imperial college London |
| 키워드 |
고분자전자재료 |
| E-Mail |
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| 원문파일 |
초록 보기 |
