| 학회 |
한국재료학회 |
| 학술대회 |
2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 |
12권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Design and ferroelectric properties of randomly oriented polycrystalline Eu-substituted Bi4Ti3O12 thin films |
| 초록 |
Ferroelectric Eu-substituted Bi4Ti3O12 (BET) thin films with a thickness of 200 nm were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by means of the liquid delivery metal organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric films. After annealing above 640 oC, the Bi3.3Eu0.7Ti3O12 thin films are crystallized and exhibit a polycrystalline structure. Bi3.3Eu0.7Ti3O12 thin films show a large remanent polarization (2Pr) of 37.71 µC/cm2 under a maximum applied field of 5 V and high dielectric constant (εr) of 410 at the frequency of 10 kHz. The BET thin films exhibited a 7 % reduction of switching charge for at least up to 1011 switching cycles at a frequency of 1 MHz. |
| 저자 |
Dong-Kyun Kang1, Won-Tae Park2, Byong-Ho Kim1
|
| 소속 |
1Department of Materials Science and Engineering, 2Korea Univ. |
| 키워드 |
Ferroelectric; Eu-substituted; polycrystalline
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| E-Mail |
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