| 학회 |
한국재료학회 |
| 학술대회 |
2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 |
12권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Microstructure and electrical properties of ferroelectric Bi3.3Pr0.7Ti3O12 thin films prepared by chemical solution deposition |
| 초록 |
Ferroelectric Bi3.3Pr0.7Ti3O12 (BPT) thin films were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition and the effect of crystallization temperature on their microstructure and electric properties were studied systematically. The crystallinity of the BPT films was improved and the average grain size increased as the crystallization temperature increased from 600 and 720 oC at an interval of 40 oC. The BPT films crystallized at 720 oC has the largest remanent polarization value 2Pr = 25.52 μC/cm2 at an applied voltage of 5 V, and the thin film exhibited a fatigue-free characteristic for at least up to 1011. A positive correlation between the remanant polarization and crystallization temperature of the BPT films was observed. |
| 저자 |
Dong-Kyun Kang1, Byong-Ho Kim2
|
| 소속 |
1Department of Materials Science and Engineering, 2Korea Univ. |
| 키워드 |
Ferroelectric; BPT; chemical solution deposition
|
| E-Mail |
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