| 초록 |
A simple binary metal chalcogenide, tin disulfide (SnS2) has been proposed as a promising material for solar energy applications as a result of its earth abundant, low-cost, and non-toxic nature. The present work shows the precipitation of SnS2 nanoparticles (NPs) and the deposition of SnS2 thin films by a simple chemical precipitation method and spin coating technique, respectively. The presence of Sn and S in the deposited films along with identical composition were confirmed from XPS results, which the appeared peaks at binding energies of 486.3 eV, 494.6 eV; and 162.5 eV assigned to Sn 3d5/2, Sn 3d3/2 and S p3/2 of SnS2 films respectively. The characteristic vibrational modes at ~310 cm-1, assigned to hexagonal SnS2 were confirmed from Raman spectrum results. The current density–voltage (I–V) measurements of the CIGS solar cell showed open circuit voltage (VOC) of 0.41 V, short circuit current density (JSC) of 25.67 mA cm−2, fill factor (FF) of 49% and conversion efficiency (η) of 5.14%. Also, as prepared SnS2 NPs are found to be an efficient photocatalytic for degradation of organic pollution in water. |
