| 학회 | 한국재료학회 |
| 학술대회 | 2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 | 20권 1호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Comparative Study on the sulfurization conditions on the characterization analysis of Cu2ZnSnS4 thin films |
| 초록 | Cu2ZnSnS4 (CZTS) thin films were synthesized by sputtered Cu/SnS2/ZnS stacked metallic or sulfides precursors. The precursor thin films were carried out the sulfurization using H2S gas atmosphere and the annealed thin films showed the dense microstructure without void. Although they indicated good characteristics of CTZS thin films by sulfurization using H2S gas atmosphere, it has toxic gas and it needs the maintenance. In order to solve this problem, the precursor thin films were carried out the sulfurization using sulfur powder in the Graphite box. CZTS thin films were grown by the sulfurization process. The sulfurization was used Sulfur powder in graphite box in the S vapor atmosphere. Effects of sulfurization conditions such as amount of Sulfur powder, reaction time, and temperature on the characterizations of MoS2 interfacial layers and CZTS thin films were investigated using X-ray diffraction patterns, transmission electron microscopy, Field emission scanning electron microscopy, and Raman spectra, respectively. The sulfurized thin film showed the double layer and incompletely crystallized microstructure at sulfurization time of 5 min. However, the sulfurized thin films showed the dense microstructure without voids over sulfurization time of 10 min. The performance of CZTS-based thin film solar cells were worse with increasing sulfurization times. |
| 저자 | Chang woo Hong1, Seung Wook Shin2, Soo Jung Yeo3, Jong-Ha Moon4, Jeong Yong Lee1, Jin Hyoek Kim2 |
| 소속 | 1Department of Material Science and Engineering, 2Chonnam National Univ., 3Department of Materials Science and Engineering, 4KAIST |
| 키워드 | CZTS; Cu/SnS2/ZnS metallic precursor; Effect sulfurization temperature |
