| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Morphology of nano-porous GaN tuned by Electrochemical wet etching |
| 초록 | Gallium nitride is a wide-bandgap semiconductor with superior characteristics of high thermal, physical, and chemical stabilities and high thermal conductivity. These properties render GaN suitable for a wide range of applications in light emitting diodes, laser diodes, and high electron mobility transistors. Many years ago, porous silicon is a processed material with nano-pores that renders a large surface over the same volume as that of original silicon. This processing type has been applied to GaN. A nano-porous GaN layer can be obtained by either dry etching or wet etching. Dry etching involves low-energy-ion-induced damage that degrades device performance. Meanwhile, electrochemical (EC) wet etching offers many advantages including low etching damage, low cost, and simple process and selectivity even though its etching speed is slower than that of dry etching. EC wet etching has been performed to an n-GaN layer using oxalic acid etchant; the doping concentration of the n-GaN layer is important for the formation of a nano-porous structure. Depending on the doping concentration, the density and diameter of the pores can be controlled. In this paper, we studied the morphology of the nano-porous GaN tuned by EC wet etchings. Morphology of nano-porous GaN was fabricated by changing the applied voltage and doping concentration. The morphologies of the nano-porous GaN structures were examined by field-emission scanning electron microscope. Raman spectroscopy was measured to investigate the optical and strain-related properties of nano-porous GaN. |
| 저자 | 손호기, 이인환 |
| 소속 | 고려대 |
| 키워드 | Electrochemical etching; Porous GaN |
