| 초록 |
In this study, inverted quantum dot light-emitting-diodes (QLEDs) were fabricated via all-solution-processing by placing a quantum dot (QD) emitting layers (EMLs) between dual polyethyleneimine ethoxylated (PEIE) layers. First, PEIE was coated as an EML protecting layer (EPL) on the QD EMLto protect the EML from the hole transport layer (HTL) solvents and the PEIE thickness was optimized by investigating solvent resistance and device integrity. Second, another PEIE layer was coated as an electron-blocking layer (EBL) on the electron transport layer (ETL) and effectively suppressed the excessive electron injection to the QD EML, thereby enhancing device efficiency. |
