| 초록 |
Ga2O3 has emerged as an alternative candidate for high power and high temperature device due to its large bandgap energy of 4.9 eV and high critical breakdown field of 8 MV/cm. The Baliga’s figure of merit is about 3400, which is 4-10 times higher than those of GaN and SiC. The inductively coupled plasma (ICP) etching behavior of (100) β-Ga2O3 flake which were prepared by mechanical exfoliation of the bulk Ga2O3 substrate has been investigated. The etch rate of (100) Ga2O3 flake increased with rf bias power up to 52 nm min−1 under 25 sccm BCl3/15 sccm N2 gas chemistry. The etch rates of other crystal planes such as (010) and (-201) were also examined under the same ICP etching condition. The (100) Ga2O3 flake has the lowest etch rate compared with (010) and (-201) planes. The ICP etched (100) Ga2O3 plane maintained a smooth surface, and the RMS (root mean square) roughness was 1.5 nm over a broad range of AFM (atomic force microscope) scanning range. |
