| 초록 |
In this paper, we engineered and introduce new concept based for solution processed solid-state electrolyte gate insulators (SEGIs) by precise blending of P(VDF-TrFE) solution and P(VDF-HFP)-[EMIM][TFSI] gel solution resulting, after deposition of a thin film solid gate dielectric FETs, in ultrahigh field-effect mobility and stable devices operating at low-voltage for several classes of unconventional semiconductors including -conjugated polymers, metal-oxides and other carbonaceous materials. By adding a minute amount of P(VDF-HFP)-[EMIM][TFSI] to the bulk fluorinated P(VDF-TrFE), high areal capacitance of ＞ 4 µFcm-2 is reached thanks to the combined polarization of the -C-F interface dipoles and electrical double layers formation. Our engineered SEGIs, unprecedented hole mobility increase from ~10-2 to 15 cm2V-1s-1 by commonly used method) at ≤ 2 V operation for poly(3-hexylthiophene-2,5-diyl) (P3HT) FETs. |
