| 초록 |
Conventional patterning ways for inorganic electronic devices is photolithography using organic solvents for coating, develop, strip. Contrary to Inorganic ones, Organic devices can’t use organic solvents because of compatibility to organic components beneath photoresist film. Furthermore, debris following decomposition reaction by UV irradiation to photo acid generator can cause deterioration of devices’ performance. In order to resolve these problems, we designed a highly fluorinated photoresist polymer [copolymerization of 6-(anthracene-9-yl)hexyl methacrylate (AHMA) and semi-perfluorodecyl methacrylate (FDMA)] taking advantage of orthogonal patterning which minimizes chemical interaction between fluorous solvents and organic devices. |
