| 초록 |
Graphitic carbon nitrides(g-C3N4) are visible light-driven semiconductors, which are easily synthesized from low‐cost materials, and highly photostable. Although g-C3N4 has suitable band gap of around 2.83eV, it suffers from low charge transportation efficiency and fast recombination by oneself. We wondered if photocurrent density under the visible light can be enhanced by employing bismuth vanadate(BiVO4) with narrow band gap of around 2.43 eV. g-C3N4 was manufactured in a form of porous heterostructure photocatalysts. The slurry from photocatalysts was loaded onto the FTO glass surface by spin-coating method. BiVO4 was added to the thin photocatalytic film. Each layer of materials was annealed to synthesize the heterojunction structure. The enhanced photoelectrochemical(PEC) performances are attributed to the synergism between g-C3N4 and BiVO4 semiconductors. The g-C3N4/BiVO4 improves the interfacial charge transfer and inhibits the photogenerated electron–hole pair recombination. In addition, ZnO films can be added to provide stability. Our results indicate that addition of ZnO improves photoelectrochemical properties for design of visible light-active photocatalysts. |
