| 초록 |
Solution processed polymer memories have great attention due to the low fabrication cost, transparency and mechanically flexibility. Combing the transparent polymer components with transparent and flexible electrode and substrate, fully transparent and flexible electronic device can be achieved. Here, we demonstrated fully flexible and transparent nonvolatile polymer memory with monolayer CVD-graphene electrode and poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ferroelectric insulator. The ferroelectric field effect transistors (FeFET) with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) semiconductor shows high performance memory properties including notable multiple write/erase endurance of 125 cycles, excellent data retention of more than 10000 sec, fully operating within 0.05 sec and reliable operation at sub-millimetre bending radius. |
