| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | H. 한-일 재료공학(KJMST 2018) |
| 제목 | AlN single crystals growth in Al-Sn flux |
| 초록 | Deep ultraviolet LEDs is attracting attention due to the purpose of many applications such as water purification, sterilization and so on. AlN single crystal is the promising substrate material applicable to AlGaN based deep ultraviolet LEDs and high power device because AlN has wide bandgap and minimal lattice mismatch with AlGaN. Therefore, it is important to find a growth method to grow a high quality AlN single crystals. Flux growth is generally advantageous to grow high quality single crystals at relatively low growth temperature. In this study, our purpose is finding a suitable flux to grow AlN single crystals. To grow AlN single crystals, conventional growth method is sublimation technique, which could grow high quality AlN single crystal. However, this method required high growth temperature above 2,000 oC and large diameters with reasonable cost could not achieved. Papers regarding AlN growth by Flux technique has been published so far. Isobe et al. reported AlN growth with Al-Sn-Ca flux. The crystallinity of the obtained AlN crystals was not enough to use as substrate. A Cu flux also had been attempted for the growth of AlN single crystals by Tanaka et al.. In order to grow high quality AlN single crystals, selection of flux materials is important. In this study, Al-Sn flux was attempted to grow AlN single crystals, because Sn has low melting point, low vapor pressure at growth temperature and easy to handle after experiment. Growable region of AlN crystals was investigated by varying the temperature and nitrogen pressure. Obtained AlN yields were plotted on a growable region diagram. The yields were increased with high pressure and temperature. In the SEM photograph of AlN crystals grown on BN crucible, the excellent polyhedral morphology of the AlN crystals were observed. Using the obtained growable region of AlN crystal, we are trying to grow AlN thin film on the SiC template. This work has been partially supported by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) Element Strategy Initiative to Form Core Center of Japan |
| 저자 | Yelim Song1, Fumio Kawamura2, Takashi Taniguchi3, Kiyoshi Shimamura4, Naoki Ohashi3 |
| 소속 | 1Graduate School of Advanced Science and Engineering, 2Waseda Univ., 3Japan, 4National Institute for Materials Science |
| 키워드 | Aluminum nitride; Single crystal; Flux growth; Growable region |
