| 학회 |
한국화학공학회 |
| 학술대회 |
2012년 가을 (10/24 ~ 10/26, 부산 BEXCO) |
| 권호 |
18권 2호, p.1934 |
| 발표분야 |
에너지 |
| 제목 |
Growth and characterization of Ga-doped ZnO thin films deposited by sol-gel dip-coating method |
| 초록 |
Ga-doped ZnO (GZO) thin films were deposited on quartz substrates using a sol-gel dip-coating method. The structural and optical properties of the resulting GZO thin films with varying Ga concentrations were investigated using scanning electron microscopy, X-ray diffraction, UV-visible spectroscopy, and photoluminescence. The GZO thin films exhibited rough surfaces with a particle-like structure. An increase in Ga concentration gave rise to slightly decreased particle sizes but did not change the surface morphology of the thin films. From all GZO thin films, the optical transmittance in the visible region was over 80%, where in the case of the undoped ZnO thin films, three emission peaks could be observed in the UV and visible region. With an increase in the Ga concentration, the intensity of the UV emission peak increased, while the intensity of the red emission peak decreased.
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| 저자 |
이상헌1, 소원섭1, 정재학1, 김민수2, 김소아람2, 임재영2
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| 소속 |
1영남대, 2인제대 나노공학부 |
| 키워드 |
Zinc oxide; Gallium; Sol-gel; Dip-coating
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| E-Mail |
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| 원문파일 |
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