| 초록 |
Recently, there is great interest in β-Ga2O3 with wide bandgap of 4.9 eV and monoclinic crystal structure for the applications of power device, solar-blind UV photodetector, and gas sensors. (-201) and (010) planes of β-Ga2O3 are most commonly researched, and their physical, optical and electrical properties depend on the crystal orientations due to the crystalline anisotropy. We report the effect of β-Ga2O3 crystal orientation on photochemical etching behavior by using KOH solution. Even though the (-201) and (010) plane β-Ga2O3 bulk substrates have the same level of carrier concentration and crystal quality, photochemical etching results showed significantly different etching characteristics. The (-201) planes exhibited the three to four times faster etch rate and different morphology on the etched surface compared to (010) oriented substrate, which is attributed the oxygen dangling bond density on the respective surfaces. |
