| 초록 |
Si3N4 films were deposited by RF (13.56 MHz) magnetron sputtering, using an Si(99.999% purity) target with a diameter of 3 inches. IT glass wafer was used as substrates. Prior to deposition the substrates are cleaned in cleaning solution. A mixed gas of Ar(99.999% purity) gas and N2(99.999% purity) gas was used for sputtering. The N2 gas flow ratio was varied from 0% to 100% as increasing 10%. The flow rates of Ar and N2 gases were controlled by mass flow controllers. The total gas pressure, total gas flow rate, RF input power, time and substrate temperature were fixed at 1~3 x 10-3 Torr, 30sccm, 100Walt, 20min. and room temperature, respectively. The thickness of the deposited films was approximately 100nm~1.5um. Film thickness was measured using FESEM. The morphology and roughness of the films were observed by FESEM and AFM. The hardness of the films were tested by nanoindentation tester. The chemical composition of the films was evaluated by XPS. |
