| 초록 |
In recent years, the electronic devices require higher voltage, higher current, and greater power density. The high power consumption results in large thermal stresses, which can be overcome by the ceramic substrates with high thermal conductivity and high mechanical strength. However, most of researches and industrial companies used gas pressure sintering method which contributes to expensive production costs to fabricate silicon nitride substrates. In this study, the Si3N4 with high thermal conductivity and high mechanical strength was pressureless sintered with sintering additives. The oxide and non-oxide additives for liquid phase sintering was used to increase the thermal conductivity and mechanical strength. The sintering schedule was optimized to achieve high density and the microstructure was examined to compare the thermal and mechanical properties of sintered samples using various sintering additive systems. The investigation of thermal conductivity was approached by using Raman spectroscopy in addition to conventional laser flash method. |
