학회 |
한국재료학회 |
학술대회 |
2010년 가을 (11/11 ~ 11/12, 무주리조트) |
권호 |
16권 2호 |
발표분야 |
F. Display and optic Materials and processing(디스플레이 및 광 재료) |
제목 |
Effects of Ga doping concentrations on the characteristics of Mg0.05Zn0.95O:Ga thin films by RF magnetron sputtering method |
초록 |
Ga-doped Mg0.05Zn0.95O (MZO:Ga) thin films were prepared on glass substrates by RF magnetron sputtering method with different Ga doping concentrations from 0 at% to 2 at%. The effect of Ga doping concentrations on the structural, electrical, morphological, and optical properties of MZO:Ga thin films were investigated. The X-ray diffraction patterns showed that all the MZO:Ga thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without secondary phase such as MgO, Ga2O3, and ZnGa2O4. The diffraction peaks from (0002) plane of MZO:Ga thin films were enhanced with increasing Ga doping concentrations. The (0002) peak positions of MZO:Ga thin films were not significantly changed, indicated that the Ga3+ ion substitutes Zn2+ ion in the hexagonal ZnO crystal structure. The cross-sectional FE-SEM micrographs showed that all the films have a columnar structure. The MZO:Ga thin film deposited at Ga doping concentration of 2 at% showed the best electrical characteristics in terms of the carrier concentration (5.23x1020 cm-3), charge carrier mobility (17.30 cm2V-1s-1), and a minimum resistivity (6.89x10-4 Ωcm). UV-visible spectroscopy studies showed that the MZO:Ga thin films were a high transmittance over 80 % in the visible region. The absorption edge of MZO:Ga thin films were very sharp and shifted toward lower wavelength side from 360 nm to 330 nm with increasing Ga doping concentrations. The band gap energy of MZO:Ga thin films were wider from 3.40 eV to 3.71 eV with increasing Ga doping concentrations. |
저자 |
Gyoung Hoon Lee1, Jin Hyoek Kim2, Seung Wook Shin1, Gi Seok Heo3
|
소속 |
1Department of Material Science and Engineering, 2Chonnam National Univ., 3Department of Materials Science and Engineering |
키워드 |
solar sell; window layer; MZO:Ga; TCO
|
E-Mail |
|