| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Quaternary transparent conducting Mg and In co-doped ZnO thin films prepared by RF sputtering technique |
| 초록 |
Mg and In co-doped ZnO (MxIyZzO, x+y+z=1, x=0.05, y=0.03 and z=0.92) thin films were prepared on glass substrates by RF magnetron sputtering technique with different temperature from RT to 400 °C at sputtering power of 175 W. The effect of substrate temperature on the structural, morphological, compositional, electrical, and optical properties of MIZO thin films were investigated. The X-ray diffraction patterns showed that all the MIZO thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without secondary phase such as MgO, In2O3, and ZnIn2O4. The diffraction peaks from (0002) plane of MIZO thin films were enhanced with increasing the substrate temperature. The (0002) peak positions of MIZO thin films were not significantly changed regardless of substrate temperature. The cross-sectional field emission scanning electron microscopy images of MIZO thin films showed that all the thin films have a columnar structure and thickness increased when temperature increased from RT to 300 °C and decreased from 350 °C to 400 °C. The MIZO thin film deposited at the Temperature of 200 °C showed the best electrical characteristics in terms of the carrier concentration (1.30ｘ1021 cm-3), charge carrier mobility (1.42 cm2V-1s-1), and a minimum resistivity (3.392ｘ10-3 Ωcm). UV-visible spectroscopy studies showed that the MIZO thin films were a high transmittance over 80 % in the visible region and the absorption edge of MIZO thin films were very sharp and shifted toward lower wavelength side from 360 nm to 330 nm with increasing the temperature. The band gap energy of MIZO thin films were wider from 3.36 eV to 3.5 eV with different temperature from RT to 400 °C |
| 저자 |
Kee seok Jeon1, Seung Wook Shin2, Chan Yang Kim3, Min Sung Kim4, Jong-Ha Moon5, Gi Seok Heo6, Jeong Yong Lee7, Jin Hyoek Kim8
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| 소속 |
1Department of Material Science and Engineering, 2Chonnam National Univ., 3300 Yongbong-Dong, 4Puk-Gu, 5Gwangju 500-757, 6South Korea, 7Department of Materials Science and Engineering, 8KAIST |
| 키워드 |
Mg and In co-doped ZnO; Trans Parent Oxide; RF magnetron sputter; Quaternary compound
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| E-Mail |
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