| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Effect of Mg concentration on characteristics of Mg and In co-doped ZnO films |
| 초록 |
Mg and In co-doped ZnO (MxIyZzO, x+y+z=1, x=0.05~0.125, y=0.03 and z=0.92 ~ 0.845) thin films were prepared on glass substrates by RF magnetron sputtering technique with Mg concentration from 5at% to 12.5at% at substrate temperature of 300°C. The effect of Mg concentration on the structural, morphological, compositional, electrical, and optical properties of MIZO thin films were investigated. The X-ray diffraction patterns showed that all the MIZO thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without secondary phase such as MgO, In2O3, and ZnIn2O4. The cross-sectional field emission scanning electron microscopy images of MIZO thin films showed that all the thin films have a columnar structure. The MIZO thin film deposited at the Mg concentration of 5at% showed the best electrical characteristics in terms of the carrier concentration (3.96ｘ1020 cm-3), charge carrier mobility (6.36 cm2V-1s-1), and a minimum resistivity (5.23ｘ10-3 Ωcm). UV-visible spectroscopy studies showed that the MIZO thin films were a high transmittance over 80 % in the visible region. The band gap energy of MIZO thin films were wider from 3.48eV to 3.73 eV with Mg concentration from 5at% to 12.5at% |
| 저자 |
Kee Seok Jeon1, Seung Wook Shin2, Yin Bo Wang1, Jong-Ha Moon3, Gi Seok Heo4, Jeong Yong Lee2, Jin Hyoek Kim4
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| 소속 |
1Department of Material Science and Engineering, 2Chonnam National Univ., 3KAIST, 4Department of Materials Science and Engineering |
| 키워드 |
Mg and In co-doped ZnO; Trans Parent Oxide; RF magnetron sputter; Quaternary compound
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| E-Mail |
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