| 학회 |
한국재료학회 |
| 학술대회 |
2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 |
20권 2호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Effect of In concentration on characteristics of Mg and In co-doped ZnO films |
| 초록 |
Mg and In co-doped ZnO (MxIyZzO, x+y+z=1, x=0.05, y=0.02~0.04 and z=0.93 ~ 0.91) thin films were prepared on glass substrates by RF magnetron sputtering technique with In concentration from 2at% to 4at% at substrate temperature of 300°C. The effect of In concentration on the structural, morphological, compositional, electrical, and optical properties of MIZO thin films were investigated. The X-ray diffraction patterns showed that all the MIZO thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without secondary phase such as MgO, In2O3, and ZnIn2O4. The cross-sectional field emission scanning electron microscopy images of MIZO thin films showed that all the thin films have a columnar structure. The MIZO thin film deposited at the In concentration of 3at% showed the best electrical characteristics in terms of the carrier concentration (3.96ｘ1020 cm-3), charge carrier mobility (6.36 cm2V-1s-1), and a minimum resistivity (5.23ｘ10-3 Ωcm). UV-visible spectroscopy studies showed that the MIZO thin films were a high transmittance over 80 % in the visible region. The band gap energy of MIZO thin films were wider from 3.5V to 3.7 eV with In concentration from 2at% to 4% |
| 저자 |
Ki Seok Jeon1, Chang Woo Hong2, Wu Minhao3, Jong-Ha Moon4, Gi Seok Heo1, Jin Hyoek Kim2
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| 소속 |
1Optoelectronics Convergence Research Center Department of Materials Science and Engineering Chonnam National Univ. 300 Yongbong-Dong, 2Buk-Gu, 3Gwangju 500-757, 4South Korea |
| 키워드 |
Mg and In co-doped ZnO; Trans Parent Oxide; RF magnetron sputter; Quaternary compound
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| E-Mail |
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