| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
A Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility That Substantially Exceeds Benchmark Values for Amorphous Silicon Semiconductors |
| 초록 |
Polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad of flexible and low-cost flat panel displays. Despite more than a decade of research focused on designing and synthesizing state-of-the-art polymer semiconductors for improving charge transport characteristics, the current mobility values are still not sufficient for many practical applications. The confident mobility in excess of ~10 cm2/Vs is the most important requirement for enabling the realization of the aforementioned near-future products. We report on an easily attainable donor–acceptor polymer semiconductor: poly(thienoisoindigo-alt-naphthalene) (PTIIG-Np). An unprecedented mobility, of 14.4 cm2/Vs, by using PTIIG-Np with a high-k gate dielectric P(VDF-TrFE) is achieved from a coating processing, which is of a magnitude that is very difficult to obtain with TFTs by means of molecular engineering. Therefore, represents a major step towards truly viable plastic electronics. |
| 저자 |
김경식1, 강석주2, Gitish K. Dutta1, 한영규2, 신태주3, 노용영2, 양창덕1
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| 소속 |
1울산과학기술대, 2동국대, 3포항가속기(연) |
| 키워드 |
GIWAX; high-k dielectric; polymer TFT; thienoisoindigo
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| E-Mail |
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