| 학회 |
한국화학공학회 |
| 학술대회 |
2015년 봄 (04/22 ~ 04/24, 제주 ICC) |
| 권호 |
21권 1호, p.783 |
| 발표분야 |
재료 |
| 제목 |
Ordering phenomena and formation of nanostructures in InxGa1-xN layers coherently grown on GaN(0001) |
| 초록 |
We study the impact that local strain effects have on the spatial distribution of In in coherent InxGa1-xN grown epitaxially on GaN(0001) using an effective crystal growth modeling technique that combines a semi-grand-canonical Monte Carlo simulation with an ab initio parameterized empirical force field.[Physical Review B 90, 245301(2014)] Our calculations show that InxGa1-xN epitaxial layers exhibit a strong tendency towards ordering, as highlighted by the formation of a vertical stack of the √3×√3 patterned layers along the direction. The ordering phenomena are identified as a key factor that determines lateral phase separation in InxGa1-xN epitaxial layers at the nanometer scale. Consequences of this nanophase separation for the enhanced radiative emission through carrier localization in InxGa1-xN of x < 1/3 are discussed. |
| 저자 |
이상헌1, Christoph Freysoldt2, Joerg Neugebauer2
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| 소속 |
1KIST 연료전지연구센터, 2Max-Planck-Institut fuer Eisenforschung GmbH |
| 키워드 |
Chemical Vapor Deposition; Light Emitting Diodes; Phase Separation; InGaN; Epitaxy
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| E-Mail |
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| VOD |
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| 원문파일 |
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