| 학회 |
한국재료학회 |
| 학술대회 |
2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 |
15권 2호 |
| 발표분야 |
A. Information Processing and Sensing(정보소재 및 센서) |
| 제목 |
Atomic layer deposition을 이용한 Hf-silicate 박막 증착과 이를 이용한 펜타센 박막 트랜지스터의 성능 향상 |
| 초록 |
Atomic layer chemical vapor deposition (ALCVD) process of hafnium silicate thin films was studied using a novel precursor combination of hafnium-amido and silicon-alkoxide without additional oxidant. Each precursor shows self limiting surface reaction characteristics with a remarkably high growth rate. We also investigate the characteristics of pentacene thin film transistor (TFT) using the hafnium silicate film as a dielectric layer. The device with hafnium silicate shows significantly higher mobility and better TFT parameters compare to the devices with Al2O3 and SiO2 dielectrics, respectively. In this study, we show that the pentacene/hafnium silicate TFT has a great potential as high mobility and low voltage operation devices. |
| 저자 |
이승협, 용기중
|
| 소속 |
포항공과대 |
| 키워드 |
high-k; OTFT; atomic layer deposition
|
| E-Mail |
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