| 학회 | 한국화학공학회 |
| 학술대회 | 2006년 가을 (10/27 ~ 10/28, 고려대학교) |
| 권호 | 12권 2호, p.2435 |
| 발표분야 | 재료 |
| 제목 | ALCVD를 이용한 Hf-silicate, Ti-silicate 게이트 산화막 성장 및 특성 연구 |
| 초록 | Atomic layer chemical vapor deposition (ALCVD) of metal (Hf or Ti) silicate films using a precursor combination of tetrakis-diethylamido-hafnium (Hf(N(C2H5)2)4), tetrakis-diethylamido-titanium ((Ti(N(C2H5)2)4) and tetra-n-butyl-orthosilicate (Si(OnBu)4) was studied for high dielectric gate oxides. We investigated the effects of deposition conditions on the film growth ; such as deposition temperature, pulse time of precursor and purge injection. In case of hafnium silicate, the growth rate, composition ratio (Hf/(Hf+Si)), and ALCVD window were 1.1 Å/cycle, 0.37 and 290-350 °C, respectively. A Si-rich composition was observed for the grown Hf-silicate films under our growth conditions. Hf-silicate films deposited at 300 °C were amorphous up to 900 °C and had an averaged dielectric constant of 9.8 with the hysteresis less than 0.18 V in capacitance-voltage (C-V) measurements. In case of titanium silicate, the growth rate, composition ratio (Ti/(Ti+Si)) and ALCVD window were 0.8 Å/cycle, 0.60 and 170~210 °C, respectively. Carbon and nitrogen impurity concentrations were detected a little (＜ 2 atomic percent). Ti-silicate films deposited at 200 °C were amorphous up to 600 °C. 본 연구는 한국학술진흥재단의 지역대학우수과학자지원사업(D00126) 의 지원을 받았음. |
| 저자 | 이승재, 용기중 |
| 소속 | 포항공과대 |
| 키워드 | Hf-silicate; Ti-silicate; ALCVD; dielectric |
| 원문파일 | 초록 보기 |
