| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Dependence of Non-Volatile Memory Characteristics based Conductive Bridge memory on Poly(methyl methacrylate) thicknesses |
| 초록 | We investigated the dependency of non-volatile memory (NVM) characteristics on Poly(methyl methacrylate) (PMMA) thicknesses. The conductive bridge random access memory (CBRAM) - cells were fabricated with the structure of metal-insulator-metal (MIM), and PMMA was used as an active layer, which was sandwiched between an inert electrode Pt and a reactive electrode Ag. A concentration of PMMA played an important role in NVM characteristics such as set voltage, high resistance state (HRS) current, endurance and retention. It was found that as the PMMA increased from 0.37 to 0.74 wt%, set voltage increased 0.20 to 0.45 V and HRS current at 0.1 V decreased from 1×10-7 to 5×10-11 A. In addition, it was confirmed that HRS and LRS currents for both endurance and retention were unstable at 0.37 and 0.74 wt%, respectively. Moreover, it was shown that the memory characteristics of CBRAM showed a stable endurance and retention at a concentration ranging from 0.37 to 0.77 wt%, i.e. , endurance of 1.5×103 cycles with a margin(Ion/off) of about 1.47×105 and retention of 105 sec with a margin of about 4.92×106. Additionally, it was found that the set voltage increased from 0.15 to 0.25 V and HRS current at 0.1 V decreased from 7.66×10-6 to 6.08×10-10 A as the reset bias increased from –1 to –5 V. In our study, we present the relationship of PMMA thickness with NVM characteristics. *This work was financially supported by the Industrial Strategic Technology Development Program(10039191, The Next Generation MLC PRAM, 3D ReRAM, Device, Materials and Micro Fabrication Technology Development) funded by the Ministry of Trade, Industry and Energy (MOTIE) and the Brain Korea 21 Plus Program in 2013, Republic of Korea. |
| 저자 | Ki-Hyun Kwon1, Hyun-Min Seung2, Kyoung-Cheol Kwon1, Jong-Sun Lee2, Myung-Jin Song3, Han-Vit jeoung2, Young-Hye Son1, Jea-Gun Park2 |
| 소속 | 1Department of Electronics and Computer Engineering, 2Hanyang Univ., 3Department of Nanoscale Semiconductor Engineering |
| 키워드 | CBRAM; PMMA; NVM |
