| 초록 |
The wide band gap ZnO is a fascinating semiconductor material which has been extensively researched in sensors, catalysis, and optoelectronic devices. However, the ZnO has limitation of light responding range (λ＜380nm). Therefore, the n-ZnO/p-Si heterojunction structure is mainly used for improving light absorption in the visible wavelength. In this study, n-ZnO nanowire/p-Si heterostructures using honeycomb-shaped silicon membranes have been proposed as an omnidirectional and flexible photodetector. Here, the free-standing silicon membrane can be attached onto the flexible polyimide substrate, which enables the detection of omnidirectional light absorption and high flexibility. As a result, we achieved flexible n-ZnO/p-Si based photodetector which can effectively absorb omnidirectional UV/Visible light. |
