| 초록 |
Transition metal dichalcogenide have been one of the most promising materials for post-silicon electronics and have attracted broad attention from academia as well as industry. In particular, the heterostructures of TMDs provide a wide range of building blocks with innovative electrical and optical properties, which was not observed from existing bulk materials. Here, the structure controllable synthesis of TMDs will be introduced by the solution-based partial thermolysis. The approach provides specific control of the structure of MoS2 such as thickness, shape and interspacing, resulting in a well-aligned MoS2 pattern. Especially, the laser-based local treatment enabled the generation of patterned MoS2 (n-type) and WSe2 (p-type) on a 4 in. wafer within several minutes under ambient conditions. As a proof of concept, we demonstrated a MoS2-based FET, a skin-attachable motion sensor, and a MoS2/WS2-based heterojunction diode, showing the applicability to practical applications. |
