| 초록 |
Dry etching of III-V compounds and III-nitrides with Cl2-, ICl- and IBr-based inductively coupled plasma (ICP) chemistries has been carried out. The effects of etch gas concentration, reactor pressure, rf chuck power and ICP source power on etch rates and selectivity have been investigated. In Cl2-based discharges, the etch rates were greatly affected by plasma composition, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AlN and GaN were obtained with Cl2/He. In ICl- and IBr-based chemistries, the etch rates of InN and AlN were relatively independent of plasma composition, while GaN showed increased etch rates with interhalogen concentration. It was confirmed that the efficient breaking of the III-nitrogen bond is crucial for higher etch rates in all cases. The Cl2 plasmas produced greater selectivity than the ICl- and IBr-based plasmas.
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