| 학회 | 한국화학공학회 |
| 학술대회 | 2001년 봄 (04/27 ~ 04/28, 연세대학교) |
| 권호 | 7권 1호, p.2182 |
| 발표분야 | 재료 |
| 제목 | Cl2/Ar 유도 결합 플라즈마를 이용한 SiC박막 식각특성 |
| 초록 | The rapid advances in high power/high temperature SiC electronics for use in high voltage switches, power conditioning, electric drive trains, and utility power management has renewed interest in the development of improved processing techniques for the material. Hence, most of the previous etching studies have been focused on obtaining the relatively large etch depths typical of ridge or facet heights, where the final surface morphology on the field is less important. Moreover, ohmic contact is deposited on the etched surface, and contact resistance actually depend on roughness from this surface. In recent years the majority of the high density plasma etching has been performed using inductively coupled plasma (ICP) etch systems because of its superior uniformity, control and lower cost of ownership.1-4 However, little work has been done on the ICP etching of SiC thin films in Cl2/Ar discharges. In this paper, a parametric study of ICP etching of SiC thin films in Cl2-based plasmas is reported. The effects of etch gas concentration, ICP source power, rf chuck power and reactor pressure on etch rates have been investigated. Results were discussed in terms of etch rates, dc bias voltage, surface morphology |
| 저자 | 최창선, 임연호, 박진수, 김태희, 한윤봉 |
| 소속 | 전북대 |
| 키워드 | SiC; ICP; Etching; Plasma |
| 원문파일 | 초록 보기 |
