| 초록 |
Gate dielectrics affected the charge carrier transport and mobility of organic semiconductor. High capacitance is normally desirable, as it allowed the reduction of the threshold voltage and operation voltage, while achieving this at lower gate field. In this study, we fabricated Poly(hexylthiophene-2,5-diyl) (P3HT) based organic thin film transistor using high-k gate dielectric using solution process. The crystallinity and surface morphology of P3HT was characterized with glazing-incident X-ray diffraction (GI-XRD) and atomic force microscopy (AFM). The current density-voltage (J-V) characteristic of gate dielectric and the electrical properties of P3HT TFT was studied at ambient condition. |
