| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Investigation of current-voltage characteristics in Ge based Schottky diodes |
| 초록 | Germanium (Ge) has gained considerable interest for the next generation nanoelectronics due to its high mobility. However, the main problem for realizing high performance Ge n-MOSFETs is the large effective Schottky barrier height at the metal/Ge interface, which results from the strong Fermi-level pinning towards the valence band edge EV of Ge [1]. This eventually leads to a high contact resistance between metal/n-Ge contacts. In addition, this gives rise to the problem of the absence of Schottky barriers on p-type Ge. Recently, concentrator photovoltaics (CPVs) based on InGaP/(In)GaAs/Ge triple junction solar cell has been reported to achieve more than 30% efficiency [2]. In such solar cells, p-type Ge wafers can be used as starting materials because it is easy to form p-n Ge bottom cells by diffusion of As or P atoms from the nucleation layer such as GaAs or InGaP during the overgrowth. Metal-semiconductor (MS) contacts are the basic building blocks for device fabrication and an understanding of carrier transport across the MS contacts is required to achieve high-performance Ge-based devices. Although many works have been performed on the metal/n-Ge Schottky contacts, relatively few reports have been found on the metal/p-Ge Schottky contacts [3]. In this work, we investigated the current-voltage properties of Cu/p-Ge Schottky contacts. Using thermionic emission (TE) model, the Schottky barrier height and the ideality factor were obtained as 0.67 eV and 1.92, respectively. Based on these results, further investigation will be discussed later. [1] T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 91, 123123 (2007). [2] R. King, D. Law, K. Edmondson, C. Fetzer, G. Kinsey, H. Yoon, R. Sherif, N. Karam, Appl. Phys. Lett. 90 183516 (2007). [3] V. Kolkovsky, S. Klemm, M. Allardt and J. Weber, Semicond. Sci. Technol. 28, 025007 (2013). |
| 저자 | Se Hyun Kim, Chan Yeoung Jung, Hogyoung Kim |
| 소속 | 서울과학기술대 |
| 키워드 | Germanium; Schottky barrier height; Solar cell; Ideality factor |
