| 학회 |
한국재료학회 |
| 학술대회 |
2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 |
27권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Fabrication method of hole pattern SiO2 without etching using AZ positive Photoresist for bottom up GaN-based nanoLED |
| 초록 |
Nano LED is in the spotlight as a next-generation display, GaN growth in the related bottom-up direction is being studied. For nanorods, optimization of the photolithography pattern is needed and lift-off technology is also required. This should implement the under cut through the light reflected from the substrate. However, not only the reflection of light but also the diffraction of light due to the difference in air gap causes a problem of Poisson's spot, which can affect the result. In this study, with positive photoresist, the correlation between the amount of uv dose and process variables such as develop time and air gap height was revealed to find out the condition in which Poisson's spot does not occur. Regardless of the distance between mask and PR, depending on the energy of UV dose amount and develop time, Poisson's spot presence or absence occurs The shape of the pattern was confirmed with an Optical Microscope(OM) and a Scanning Electron Microscope(SEM). The hole pattern for lift-off can shorten the process time by excluding the etching process and can be applied to the regrowth of GaN by being used as a SiO2 mask. |
| 저자 |
김화영, 변동진, 안민주, 심규연, 강성호, 김효종
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| 소속 |
고려대 |
| 키워드 |
nano LED; bottom up; lift-off; positive photoresist; Poisson's spot
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| E-Mail |
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