| 초록 |
Single crystalline ZnIn2Se4 layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 400℃ with hot wall epitaxy (HWE) system by evaporating ZnIn2Se4 source at 630℃. After the as-grown ZnIn2Se4 single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ZnIn2Se4 single crystalline thick films has been investigated by the photoluminescence(PL) at 10 K. The native defects of VZn, VSe, Znint, and Seint obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ZnIn2Se4 single crystalline thick films to an optical p-type. Also, we confirmed that In in ZnIn2Se4/GaAs did not form the native defects because In in ZnIn2Se4 single crystalline thick films existed in the form of stable bonds. |
