| 학회 |
한국재료학회 |
| 학술대회 |
2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 |
13권 1호 |
| 발표분야 |
에너지 환경재료 |
| 제목 |
Growth and characterization of hydrogenated Al-doped ZnO by rf magnetron sputtering |
| 초록 |
In this work, we prepared Al-doped zinc oxide films (AZO) by rf magnetron sputtering using a ceramic target (98wt.% ZnO, 2wt.% Al2O3) at the H2/Ar ambient. We prepared the various AZO films on the glass by changing the ratio of H2/(Ar+H2) and the substrate temperature from RT to 200℃. The resistivity of AZO:H film was significantly reduced by the addition of H2 in Ar ambient during rf sputtering. It showed that the carrier concentration of AZO:H films was increased with increasing H2 ratio at the room temperature, but carrier concentration was decreased with increase of the substrate temperature. The carrier concentration was significantly reduced as the substrate temperate was increased from 150 to 250 °C. As a result, in the 2% H2 addition with the substrate temperature of 150°C, it showed the excellent electrical property of the AZO:H films with the resistivity of 3.21ｘ10−4 Ω•cm. UV-measurement showed that the optical transmission of AZO:H films is above 85% in the visible range with widen optical band gap. |
| 저자 |
탁성주1, 이승훈2, 김원목2, 강민구1, 김동환1
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| 소속 |
1고려대, 2한국과학기술(연) |
| 키워드 |
TCO; Hydrogenated Al-doped ZnO; rf magnetron sputtering
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| E-Mail |
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