| 학회 |
한국재료학회 |
| 학술대회 |
2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 |
20권 2호 |
| 발표분야 |
B. 나노 재료(Nanomaterials) |
| 제목 |
Control the Structure and morphology of Tellurium nanostructure by Galvanic Displacement Reaction |
| 초록 |
Tellurium (Te) is p-type semiconductor with narrow band gap, known as high performance such as piezoelectricity, thermoelectricity and nonlinear optical property. The crystal structure of Te is an anisotropic helical chains with van der waals interaction in a hexagonal lattice and grow along the c-axis direction due to the dangling bond of the (001) plane. Because of theses anisotropic, there have been only a few studies about 2-D Te nanostructure. The aim of our research is to synthesize the unique 2-D Te nanostructure and evaluate its physical properties synthesized by simple galvanic displacement reaction (GDR) at room temperature with sodium hydroxide as a reducing agent and Cetyl Trimethyl Ammonium Bromide (CTAB) used as surfactant. The structure and morphology of Te nanostructure were controlled by the amount of sodium hydroxide, CTAB and reaction time. The morphology and structure was analyzed by x-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM). Optical properties of Te nanostrucrure was confirmed by UV-absorption, photoluminescence and Raman scattering. |
| 저자 |
SeongCheol Cho1, Hyo-Ryoung Lim2, Seil Kim3, Nosang Vincent Myung4, Yongho Choa1
|
| 소속 |
1Dept. of Fusion Chemical Engineering, 2Hanyang univ, 3Ansan, 4Korea |
| 키워드 |
Tellurium; Cetyl Trimethyl Ammonium Bromide; galvanic displacement reaction; 2-D nanostructure
|
| E-Mail |
|
