| 학회 | 한국재료학회 |
| 학술대회 | 2012년 가을 (11/07 ~ 11/09, 라카이샌드파인 리조트) |
| 권호 | 18권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Effect of Ni Evaporation Rate on Nonvolatile Memory Characteristics for Small-molecule Memory-Cell Embedded with Ni Nanocrystals |
| 초록 | Abstract In general, small-molecule memory-cells were developed a structure consisting of bottom electrodes, lower small-molecule layer, metal nanocrystals, upper small-molecule layer, and top electrode. Small-molecule memory-cells present bistable memory characteristics by inserting metal nanocrystals between small-molecule layers. We fabricated the device structure of Al / Alq3 (Aluminum tris (8-hydroxyquinoline)) / Ni nanocrystals surrounded by Ni oxide / Alq3 / Al in an in-situ process and analyzed Ni nanocrystal by using transmission electron microscope (TEM) and Auger electron spectroscopy (AES). Ni nanocrystal size and distribution depend on Ni evaporation rate and with and without O2 plasma oxidation. The memory-cell was estimated nonvolatile memory characteristics such as memory margin, retention time, and endurance cycle by varying a size and a distribution of Ni nanocrystal. As a result, we optimized a size and a distribution of Ni nanocrystal to obtain good nonvolatile memory characteristics in small-molecule memory-cell. The memory-cell showed a memory margin of 1X103, retention time of more than 105 sec, and endurance of more than 200 cycles. * Acknowledgement This work was supported by R&D Program of the Ministry of Knowledge Economy and the Brain Korea 21 Project in 2012. |
| 저자 | Myung-Jin Song1, Hyun Min Seung2, Jong-Sun Lee1, Dong Hyun Yang2, Jea-Gun Park1 |
| 소속 | 1Department of Advanced Semiconductor Material Device Development Center, 2Hanyang Univ. |
| 키워드 | memory; nonvolatile; small-molecule; nanocrystal |
