| 학회 | 한국재료학회 |
| 학술대회 | 2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 | 20권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 | Indium-doped YAG:Ce phosphors for WLED Application |
| 초록 | There are various ways in white light generation, such as combining blue light diode and a yellow phosphor, mixing red, green and blue phosphors, and so on. Among them, combining GaN-based blue LED chip and cerium-doped yttirium aluminum garnet (Y3Al5O12:Ce3+, YAG :Ce) phosphor is most widely used. The YAG:Ce is a well-known yellow-emitting phosphor, which is efficiently excited by the blue LED chip. In fabrication of wLEDs, YAG :Ce phosphor is essential and the quality of it has a great effect on the luminescence properties of wLEDs. Therefore, it is important to increase the luminance of YAG :Ce phophors. In this study, the Indium-doped YAG:Ce phosphors were successively synthesized by solid-state method and photoluminescence properties were investigated. The YAG:Ce phosphors were synthesized by using Y2O3, α-Al2O3, In2O3, CeO2 as raw materials and BaF2 as a fluxing agent. The raw materials and fluxing agent were weighed in a required amount and mixed thoroughly, then annealed under oxidative atmosphere at 1550°C. The obtained YAG:Ce phosphors exhibited broad emission spectrum in the range of 480 to 750 nm, peaked at 536 nm under 467 nm excitation, based on the 5d-4f transition of Ce3+. The luminance of YAG:Ce phosphors were increased by doping In3+ ions on Al3+ sites. The concentration of In3+ dopant was optimized. |
| 저자 | Mihye Wu, Ju Young Jo, Sungho Choi, Ha-Kyun Jung |
| 소속 | Korea Research Institute of Chemical Technology |
| 키워드 | In-doped YAG:Ce; wLED |
